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A Gallium Nitride Transistor Withstood More Than 3,400 Volts
EPFL researchers built a gallium-nitride transistor on silicon that withstood more than 3.4 kilovolts while keeping resistance low. Its charge-balanced design could shrink high-voltage power converters, but it remains a laboratory device without demonstrated converter-level efficiency, manufacturing yield or long-term field reliability.
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